technical data npn power silicon transistor qualified per mil - prf - 19500/526 devices qualified level 2N3879 jantx jantxv maximum ratings ratings symbol value unit collector - emitter voltage v ceo 75 vdc collector - base voltage v cbo 120 vdc emitter - base voltage v ebo 7.0 vdc base current i b 5.0 adc collector current i c 7.0 adc total power dissipation @ t c = 25 0 c (1) p t 35 w operating & storage junction temperature range t j , t stg - 65 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 5.0 0 c/w 1) derate linearly 200 mw/ 0 c for t c > 25 0 c *see appendix a for package outline electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 200 madc v (br) ceo 75 vdc collector - emitter cutoff current v ce = 50 vdc i ceo 5.0 vdc collector - emitter cutoff current v ce = 100 vdc, v be = 1.5 vdc i cex 4.0 madc collector - bas e cutoff current v cb = 120 vdc i cbo 25 madc emitter - base cutoff current v eb = 7.0 vdc i ebo 10 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 66* (to - 213aa)
2n 3879 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (2) forward - current transfer ratio i c = 0.5 adc, v ce = 5.0 vdc i c = 4.0 adc, v ce = 5.0 vdc i c = 4.0 adc, v ce = 2.0 vdc h fe 40 20 12 80 100 collector - emitter saturation voltage i c = 4.0 adc, i b = 0.4 adc v ce(sat) 1.2 vdc base - emitter saturation voltage i c = 4.0 adc, i b = 0.4 adc v be(sat) 2.0 vdc base - emitter voltage i c = 4.0 adc, v ce = 2.0 vdc v be(on) 1.8 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 500 madc, v ce = 10 vdc, f = 10 mhz ? h fe ? 4.0 20 output capacitance v cb = 10 vdc, i e = 0, 0.1 mhz f 1.0 mhz c obo 175 pf switching characteristics turn - on time v cc = 30 vdc; i c = 4.0 adc; i b = 0.4 adc t on 0.44 m s turn - off time v cc = 30 vdc; i c = 4.0 adc; i b = - i b = 0.4 adc t off 1.2 m s safe operating area dc tests t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = 5.0 vdc, i c = 7.0 adc test 2 v ce = 28 vdc, i c = 1.25 adc test 3 v ce = 40 vdc, i c = 500 madc test 4 v ce = 75 vdc, i c = 100 madc (2) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 115 8 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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